? 2002 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 1000 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c24a i dm t c = 25 c, pulse width limited by t jm 96 a i ar t c = 25 c24a e ar t c = 25 c60mj e as t c = 25 c 3.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 10 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 560 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s 300 c m d mounting torque to-264 0.4/6 nm/lb.in. weight plus 247 6 g to-264 10 g symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1ma 1000 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.5 v i gss v gs = 20 v, v ds = 0 200 na i dss v ds = v dss t j = 25c 100 ma v gs = 0 v t j = 125c 3 ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 0.39 ? note 1 98874-a(8/02) plus 247 tm (ixfx) g d (tab) g = gate d = drain s = source tab = drain s g d (tab) to-264 aa (ixfk) hiperrf tm power mosfets f-class: megahertz switching n-channel enhancement mode avalanche rated, low q g , low intrinsic r g high dv/dt, low t rr features z rf capable mosfets z double metal process for low gate resistance z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect z fast intrinsic rectifier applications z dc-dc converters z switched-mode and resonant-mode power supplies, >500khz switching z dc choppers z pulse generation z laser drivers advantages z plus 247 tm package for clip or spring mounting z space savings z high power density ixfx 24n100f ixfk 24n100f v dss = 1000 v i d25 = 24 a r ds(on) = 0.39 ? ? ? ? ? t rr 250 ns
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 note 1 16 24 s c iss 6600 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 760 pf c rss 230 pf t d(on) 22 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 18 ns t d(off) r g = 1 ? (external) 52 ns t f 11 ns q g(on) 195 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 40 nc q gd 100 nc r thjc 0.21 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 24 a i sm repetitive; 96 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr 250 ns q rm 1.4 c i rm 10 a i f = i s ,-di/dt = 100 a/ s, v r = 100 v dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm outline note: 1. pulse test, t 300 s, duty cycle d 2 % to-264 aa outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. ixfk 24n100f ixfx 24n100f
v gs - volts 3.0 3.5 4.0 4.5 5.0 5.5 6.0 i d - amperes 0 5 10 15 20 25 t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 4 8 12 16 20 24 28 t j - degrees c -25 0 25 50 75 100 125 150 r ds(on) - normalized 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i d - amperes 0 5 10 15 20 25 30 35 40 45 50 r ds(on) - normalized 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v ds - volts 0 5 10 15 20 25 30 i d - amperes 0 5 10 15 20 25 30 35 40 v ds - volts 0 5 10 15 20 25 i d - amperes 0 10 20 30 40 50 60 5v v gs = 10v t j = 125 o c t j = 25 o c 6v 5v t j = 25 o c t j = 25 o c t j = 150 o c 6v v gs = 10v 9v 8v 7v v gs = 10v 9v 8v 7v t j = 125 o c t j = -40 o c ixf_24n100f-p1 i d = 24a i d = 12a v gs = 10v fig. 1. output characteristics at 25 o c fig. 2. output characteristics at 125 o c fig. 3. r ds(on) vs. drain current fig. 4. r ds(on) vs. t j fig. 5. drain vs. case temperature fig. 6. admittance curves ixfk 24n100f ixfx 24n100f
pulse width - seconds 10 -4 10 -3 10 -2 10 -1 10 0 10 1 r(th) jc - k/w 0.001 0.01 0.1 1 v ds - volts 0 5 10 15 20 25 30 35 40 capacitance - pf 100 250 500 1000 2500 5000 gate charge - nc 0 50 100 150 200 250 300 v gs - volts 0 5 10 15 crss coss ciss v ds = 500v i d = 12a f = 1mhz v sd - volts 0.2 0.4 0.6 0.8 1.0 1.2 i d - amperes 0 5 10 15 20 25 30 35 40 45 50 t j = 125 o c t j = 25 o c ixf_24n100f-p2 single pulse fig. 7. gate charge cha racteristic curve fig. 8. capacitance curves fig. 9. source current vs. source to drain voltage fig. 10. thermal impedence ixfk 24n100f ixfx 24n100f
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